Phosphor with light barriers

ABSTRACT

A device including a phosphor layer having a plurality of holes or pockets arranged within the phosphor layer to reduce lateral light transmission. The phosphor layer can be sized and positioned to extend over a plurality of LED emitter pixels.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Non-Provisional applicationSer. No. 16/228,586 filed Dec. 20, 2018, which in turn claims thebenefit of U.S. Provisional Application No. 62/609,588 filed Dec. 22,2017 and U.S. Non-Provisional application Ser. No. 16/226,487 filed Dec.19, 2018; each of said applications are incorporated by reference as iffully set forth herein.

FIELD OF THE INVENTION

The present invention relates to light emitting diodes (LEDs), and moreparticularly, to phosphors with lateral light barriers.

BACKGROUND

Manufacturing small addressable LED pixel systems with lateral lightbarriers can be difficult. Coating phosphor sidewalls with absorbers,distributed Bragg reflectors (DBR), or other optical isolating materialcan provide a partial solution but may be impossible or costly toimplement on segmented LED systems with pixels sized on the order of 500microns or smaller.

Currently, light crosstalk between emitter segments is commonlycontrolled by use of sidewall reflectors and absorbers to isolate eachLED segment. However, for very small pixel size LEDs, such as those lessthan 500 microns or even 300 micron LEDs, phosphor segments are closelyspaced, and sidewall coating application of absorbers, DBR, or otheroptical isolating material is difficult.

SUMMARY

In one embodiment a device can include a phosphor layer comprisingphosphor material and at least one of a ceramic, a glass, or an organicbinder. A plurality of holes or pockets can be arranged within specificregions, areas, or internal walls of the phosphor layer to block lighttransmission.

In another embodiment an LED package includes a phosphor layercomprising phosphor material and at least one of a ceramic, a glass, oran organic binder, and having a plurality of holes or pockets arrangedwithin to reduce lateral light transmission through the phosphor layer.A light emitting diode (LED) array can be attached to the phosphorlayer, with each LED in the array including an emitter pixel. Thephosphor layer can be sized and positioned to extend over a plurality ofLED emitter pixels.

In some embodiments the phosphor layer comprises layered thin films. Inother embodiments at least some of the plurality of holes or pocketsdefine circumscribing walls around a region in the phosphor layer thatpermits only negligible outgoing or incoming lateral light transmission.

The light emitting diode (LED) array can define interpixel lanes and atleast some of the plurality of holes or pockets in the phosphor layerare positioned to vertically extend over the interpixel lanes.

In some embodiments the plurality of holes or pockets further include atleast one of continuous, discontinuous, partial open channels, etchedpinholes in the phosphor layer, or a plurality of holes in or through orpockets within the phosphor layer. The holes or pockets can also bearranged to define two-dimensional patterned lateral light barriers thatare at least one of radial, linear, rectangular, square, or hexagonal.In some embodiments the plurality of holes or pockets definetwo-dimensional patterned lateral light barriers that extend from bottomto top of phosphor layer.

In another embodiment, a method of making a ceramic phosphor layerincludes the steps of combining ceramic powder precursors, a ceramicbinder, phosphor material, and solvent to form a mixture. The mixture iscoated onto a substrate to form a film. Conditions for creating holes orpockets in selected regions of coated mixture are arranged by at leastone of deforming or removing material from the film, or adding at leastone of sacrificial material, sintering rods, and beads to the film. Thefilm can be heated to form a ceramic phosphor with holes or pockets inselected regions.

In another embodiment, a method for making a ceramic phosphor layer withlateral light barriers includes the steps of mixing ceramic powderprecursors, the ceramic binder, solvent, and polymeric beads or rods;slotting die coating onto a substrate to form a thin film; and layeringmultipole sheets to from thicker layers. Rods and beads or othersacrificial material can be sintered to create holes or pockets and thephosphor ceramic finished by cutting or polishing the layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view illustration of an LED array with an explodedportion;

FIG. 1B is a cross sectional illustration of an LED array with trenches;

FIG. 1C is a perspective illustration of another LED array withtrenches;

FIG. 1D illustrates an example LED with a matrix of emitters that are 1square mm (not drawn to scale) with reference to FIG. 1A;

FIG. 1E illustrates an example LEDs with a matrix of emitters that are 1square mm (not drawn to scale) with reference to FIG. 1A;

FIG. 1F illustrates, in cross section, an individual emitter from thearrays of FIGS. 1A, 1D, 1E;

FIG. 1G illustrates, in cross section, another embodiment of anindividual emitter from the arrays of FIGS. 1A, 1D, 1E;

FIG. 1H illustrates a top view and side view of an example device ofFIG. 1G;

FIG. 1I illustrates a top view and side view of an example device ofFIG. 1G;

FIG. 1J illustrates a method of making ceramic phosphor layers withlateral light barriers;

FIG. 1K illustrates a general method of making ceramic phosphor layerswith air gaps;

FIG. 2A is a top view of the electronics board with LED array attachedto the substrate at the LED device attach region in one embodiment;

FIG. 2B is a diagram of one embodiment of a two channel integrated LEDlighting system with electronic components mounted on two surfaces of acircuit board;

FIG. 2C is an example vehicle headlamp system; and

FIG. 3 shows an example illumination system.

DETAILED DESCRIPTION

Examples of different light illumination systems and/or light emittingdiode (“LED”) implementations will be described more fully hereinafterwith reference to the accompanying drawings. These examples are notmutually exclusive, and features found in one example may be combinedwith features found in one or more other examples to achieve additionalimplementations. Accordingly, it will be understood that the examplesshown in the accompanying drawings are provided for illustrativepurposes only and they are not intended to limit the disclosure in anyway. Like numbers refer to like elements throughout.

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, these elementsshould not be limited by these terms. These terms may be used todistinguish one element from another. For example, a first element maybe termed a second element and a second element may be termed a firstelement without departing from the scope of the present invention. Asused herein, the term “and/or” may include any and all combinations ofone or more of the associated listed items.

It will be understood that when an element such as a layer, region, orsubstrate is referred to as being “on” or extending “onto” anotherelement, it may be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there may be no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element and/or connected or coupled tothe other element via one or more intervening elements. In contrast,when an element is referred to as being “directly connected” or“directly coupled” to another element, there are no intervening elementspresent between the element and the other element. It will be understoodthat these terms are intended to encompass different orientations of theelement in addition to any orientation depicted in the figures.

Relative terms such as “below,” “above,” “upper,”, “lower,” “horizontal”or “vertical” may be used herein to describe a relationship of oneelement, layer, or region to another element, layer, or region asillustrated in the figures. It will be understood that these terms areintended to encompass different orientations of the device in additionto the orientation depicted in the figures.

Semiconductor light emitting devices (LEDs) or optical power emittingdevices, such as devices that emit ultraviolet (UV) or infrared (IR)optical power, are among the most efficient light sources currentlyavailable. These devices (hereinafter “LEDs”), may include lightemitting diodes, resonant cavity light emitting diodes, vertical cavitylaser diodes, edge emitting lasers, or the like. Due to their compactsize and lower power requirements, for example, LEDs may be attractivecandidates for many different applications. For example, they may beused as light sources (e.g., flash lights and camera flashes) forhand-held battery-powered devices, such as cameras and cell phones. Theymay also be used, for example, for automotive lighting, heads up display(HUD) lighting, horticultural lighting, street lighting, torch forvideo, general illumination (e.g., home, shop, office and studiolighting, theater/stage lighting and architectural lighting), augmentedreality (AR) lighting, virtual reality (VR) lighting, as back lights fordisplays, and IR spectroscopy. A single LED may provide light that isless bright than an incandescent light source, and, therefore,multi-junction devices or arrays of LEDs (such as monolithic LED arrays,micro LED arrays, etc.) may be used for applications where morebrightness is desired or required.

Methods and structures for creating lateral light barriers withinceramic phosphor system such as described below can be used inconjunction with, or as a replacement for or improvement of, sidewall orinter-segment lane reflectors and absorbers.

According to embodiments of the disclosed subject matter, LED arrays(e.g., micro LED arrays) may include an array of pixels as shown in FIG.1A, 1B, and/or 1C. LED arrays may be used for any applications such asthose requiring precision control of LED array segments. Pixels in anLED array may be individually addressable, may be addressable ingroups/subsets, or may not be addressable. In FIG. 1A, a top view of aLED array 110 with pixels 111 is shown. An exploded view of a 3×3portion of the LED array 110 is also shown in FIG. 1A. As shown in the3×3 portion exploded view, LED array 110 may include pixels 111 with awidth w₁ of approximately 100 μm or less (e.g., 40 μm). The lanes 113between the pixels may be separated by a width, w₂, of approximately 20μm or less (e.g., 5 μm). The lanes 113 may provide an air gap betweenpixels or may contain other material, as shown in FIGS. 1B and 1C andfurther disclosed herein. The distance di from the center of one pixel111 to the center of an adjacent pixel 111 may be approximately 120 μmor less (e.g., 45 μm). It will be understood that the widths anddistances provided herein are examples only, and that actual widthsand/or dimensions may vary.

It will be understood that although rectangular pixels arranged in asymmetric matrix are shown in FIGS. 1A, B and C, pixels of any shape andarrangement may be applied to the embodiments disclosed herein. Forexample, LED array 110 of FIG. 1A may include, over 10,000 pixels in anyapplicable arrangement such as a 100×100 matrix, a 200×50 matrix, asymmetric matrix, a non-symmetric matrix, or the like. It will also beunderstood that multiple sets of pixels, matrixes, and/or boards may bearranged in any applicable format to implement the embodiments disclosedherein.

FIG. 1B shows a cross section view of an example LED array 1000. Asshown, the pixels 1010, 1020, and 1030 correspond to three differentpixels within an LED array such that a separation sections 1041 and/orn-type contacts 1040 separate the pixels from each other. According toan embodiment, the space between pixels may be occupied by an air gap.As shown, pixel 1010 includes an epitaxial layer 1011 which may be grownon any applicable substrate such as, for example, a sapphire substrate,which may be removed from the epitaxial layer 1011. A surface of thegrowth layer distal from contact 1015 may be substantially planar or maybe patterned. A p-type region 1012 may be located in proximity to ap-contact 1017. An active region 1021 may be disposed adjacent to then-type region and a p-type region 1012. Alternatively, the active region1021 may be between a semiconductor layer or n-type region and p-typeregion 1012 and may receive a current such that the active region 1021emits light beams. The p-contact 1017 may be in contact with SiO2 layers1013 and 1014 as well as plated metal (e.g., plated copper) layer 1016.Then type contacts 1040 may include an applicable metal such as Cu. Themetal layer 1016 may be in contact with a reflective layer 1015 whichmay serve as a contact.

Notably, as shown in FIG. 1B, the n-type contact 1040 may be depositedinto trenches 1130 created between pixels 1010, 1020, and 1030 and mayextend beyond the epitaxial layer. Separation sections 1041 may separateall (as shown) or part of a converter material 1050. It will beunderstood that a LED array may be implemented without such separationsections 1041 or the separation sections 1041 may correspond to an airgap. The separation sections 1041 may be an extension of the n-typecontacts 1040, such that, separation sections 1041 are formed from thesame material as the n-type contacts 1040 (e.g., copper). Alternatively,the separation sections 1041 may be formed from a material differentthan the n-type contacts 1040. According to an embodiment, separationsections 1041 may include reflective material. The material inseparation sections 1041 and/or the n-type contact 1040 may be depositedin any applicable manner such as, for example, by applying a meshstructure which includes or allows the deposition of the n-type contact1040 and/or separation sections 1041. Converter material 1050 may havefeatures/properties similar to wavelength converting layer 205 of FIG.2A. As noted herein, one or more additional layers may coat theseparation sections 1041. Such a layer may be a reflective layer, ascattering layer, an absorptive layer, or any other applicable layer.One or more passivation layers 1019 may fully or partially separate then-contact 1040 from the epitaxial layer 1011.

The epitaxial layer 1011 may be formed from any applicable material toemit photons when excited including sapphire, SiC, GaN, Silicone and maymore specifically be formed from a III-V semiconductors including, butnot limited to, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP,InAs, InSb, II-VI semiconductors including, but not limited to, ZnS,ZnSe, CdSe, CdTe, group IV semiconductors including, but not limited toGe, Si, SiC, and mixtures or alloys thereof. These examplesemiconductors may have indices of refraction ranging from about 2.4 toabout 4.1 at the typical emission wavelengths of LEDs in which they arepresent. For example, Ill-Nitride semiconductors, such as GaN, may haverefractive indices of about 2.4 at 500 nm, and III-Phosphidesemiconductors, such as InGaP, may have refractive indices of about 3.7at 600 nm. Contacts coupled to the LED device 200 may be formed from asolder, such as AuSn, AuGa, AuSi or SAC solders.

The n-type region may be grown on a growth substrate and may include oneor more layers of semiconductor material that include differentcompositions and dopant concentrations including, for example,preparation layers, such as buffer or nucleation layers, and/or layersdesigned to facilitate removal of the growth substrate. These layers maybe n-type or not intentionally doped, or may even be p-type devicelayers. The layers may be designed for particular optical, material, orelectrical properties desirable for the light emitting region toefficiently emit light. Similarly, the p-type region 1012 may includemultiple layers of different composition, thickness, and dopantconcentrations, including layers that are not intentionally doped, orn-type layers. An electrical current may be caused to flow through thep-n junction (e.g., via contacts) and the pixels may generate light of afirst wavelength determined at least in part by the bandgap energy ofthe materials. A pixel may directly emit light (e.g., regular or directemission LED) or may emit light into a wavelength converting layer 1050(e.g., phosphor converted LED, “PCLED”, etc.) that acts to furthermodify wavelength of the emitted light to output a light of a secondwavelength.

Although FIG. 1B shows an example LED array 1000 with pixels 1010, 1020,and 1030 in an example arrangement, it will be understood that pixels inan LED array may be provided in any one of a number of arrangements. Forexample, the pixels may be in a flip chip structure, a verticalinjection thin film (VTF) structure, a multi-junction structure, a thinfilm flip chip (TFFC), lateral devices, etc. For example, a lateral LEDpixel may be similar to a flip chip LED pixel but may not be flippedupside down for direct connection of the electrodes to a substrate orpackage. A TFFC may also be similar to a flip chip LED pixel but mayhave the growth substrate removed (leaving the thin film semiconductorlayers un-supported). In contrast, the growth substrate or othersubstrate may be included as part of a flip chip LED.

The wavelength converting layer 1050 may be in the path of light emittedby active region 1021, such that the light emitted by active region 1021may traverse through one or more intermediate layers (e.g., a photoniclayer). According to embodiments, wavelength converting layer 1050 ormay not be present in LED array 1000. The wavelength converting layer1050 may include any luminescent material, such as, for example,phosphor particles in a transparent or translucent binder or matrix, ora ceramic phosphor element, which absorbs light of one wavelength andemits light of a different wavelength. The thickness of a wavelengthconverting layer 1050 may be determined based on the material used orapplication/wavelength for which the LED array 1000 or individual pixels1010, 1020, and 1030 is/are arranged. For example, a wavelengthconverting layer 1050 may be approximately 20 μm, 50 μm or 200 μm. Thewavelength converting layer 1050 may be provided on each individualpixel, as shown, or may be placed over an entire LED array 1000.

Primary optic 1022 may be on or over one or more pixels 1010, 1020,and/or 1030 and may allow light to pass from the active region 1021and/or the wavelength converting layer 1050 through the primary optic.Light via the primary optic may generally be emitted based on aLambertian distribution pattern such that the luminous intensity of thelight emitted via the primary optic 1022, when observed from an idealdiffuse radiator, is directly proportional to the cosine of the anglebetween the direction of the incident light and the surface normal. Itwill be understood that one or more properties of the primary optic 1022may be modified to produce a light distribution pattern that isdifferent than the Lambertian distribution pattern.

Secondary optics which include one or both of the lens 1064 andwaveguide 1062 may be provided with pixels 1010, 1020, and/or 1030. Itwill be understood that although secondary optics are discussed inaccordance with the example shown in FIG. 1B with multiple pixels,secondary optics may be provided for single pixels. Secondary optics maybe used to spread the incoming light (diverging optics), or to gatherincoming light into a collimated beam (collimating optics). Thewaveguide 1062 may be coated with a dielectric material, a metallizationlayer, or the like and may be provided to reflect or redirect incidentlight. In alternative embodiments, a lighting system may not include oneor more of the following: the wavelength converting layer 1050, theprimary optics 1022, the waveguide 1062 and the lens 1064.

Lens 1064 may be formed form any applicable transparent material suchas, but not limited to SiC, aluminum oxide, diamond, or the like or acombination thereof. Lens 1064 may be used to modify the a beam of lightto be input into the lens 1064 such that an output beam from the lens1064 will efficiently meet a desired photometric specification.Additionally, lens 1064 may serve one or more aesthetic purpose, such asby determining a lit and/or unlit appearance of the multiple LED devices200B.

FIG. 1C shows a cross section of a three dimensional view of a LED array1100. As shown, pixels in the LED array 1100 may be separated bytrenches which are filled to form n-contacts 1140. The pixels may begrown on a substrate 1114 and may include a p-contact 1113, a p-GaNsemiconductor layer 1112, an active region 1111, and an n-GaNsemiconductor layer 1110. It will be understood that this structure isprovided as an example only and one or more semiconductor or otherapplicable layers may be added, removed, or partially added or removedto implement the disclosure provided herein. A converter material 1117may be deposited on the semiconductor layer 1110 (or other applicablelayer).

Passivation layers 1115 may be formed within the trenches 1130 andn-contacts 1140 (e.g., copper contacts) may be deposited within thetrenches 1130, as shown. The passivation layers 1115 may separate atleast a portion of the n-contacts 1140 from one or more layers of thesemiconductor. According to an implementation, the n-contacts 1140, orother applicable material, within the trenches may extend into theconverter material 1117 such that the n-contacts 1140, or otherapplicable material, provide complete or partial optical isolationbetween the pixels.

FIG. 1D illustrates an example LED with a matrix of emitters that are 1square mm (not drawn to scale) with reference to FIG. 1A. In FIG. 1Dthere is illustrated a 3×3 matrix of emitters within the 1 square mm.Each emitter is approximately 300 microns with a 50 micron space betweenemitters. The center of emitter to center of emitter spacing isapproximately 350 microns.

FIG. 1E illustrates an example LEDs with a matrix of emitters that are 1square mm (not drawn to scale) with reference to FIG. 1A. In FIG. 1Ethere is illustrated a 10×10 matrix of emitters (only a portion of thematrix is represented) within the 1 square mm. Each emitter isapproximately 80 microns with a 20 micron space between emitters. Thecenter of emitter to center of emitter spacing is approximately 100microns.

As the emitters have decreased in size to under 500 microns and to thesizes depicted in FIG. 1A, 1D, 1E or even other configurations that aresub-300 microns and sub-100 microns, or even down to tens of microns,for example, and the spacing between emitters has continued to decrease,the coating phosphor sidewalls with absorbers, distributed Braggreflectors (DBR), or other optical isolating material used in priorsolutions fail to provide the necessary isolation.

FIG. 1F illustrates, in cross section, an individual emitter 1 from thearrays of FIGS. 1A, 1D, 1E. The emitter 1 includes a solder layer 2supporting the active region 3 and the substrate 4. Adjacent to thesubstrate 4 and distal to the active region 3 is a pattern layer 5.

Solder layer 2 may be formed from AuSn or other metal material andgenerally provides a metal contact to a board, such as a printed circuitboard (PCB). As illustrated, the solder layer 2 may be approximately 50microns (47 microns as shown) thick.

The active region 3, or semiconductor layer, may take the form of alayer of pGaN. This active region 3 is the emitter active region. Aswould be understood by those possessing an ordinary skill the pertinentarts, GaN is a binary III/V direct bandgap semiconductor commonly usedin light-emitting diodes. GaN has a crystal structure with a wide bandgap of 3.4 eV that makes the material ideal for applications inoptoelectronics, high-power and high-frequency devices. GaN can be dopedwith silicon (Si) or with oxygen to create an n-type GaN and withmagnesium (Mg) to create a p-type GaN as is used in the present example.The substrate 4 may be formed from GaN. The substrate 4 and activeregion 3 may be approximately 6 microns combined with the substrate 4being approximately 5 microns and the active region 3 approximately 1micron.

Pattern layer 5 may take the form of a patterned sapphire substrate(PSS) layer. Pattern layers 5 may provide periodic structures of varyinggeometry and dimension on the sapphire substrate surface. These sapphirewafers with periodic structures of various shapes such as cone, dome,pyramid, and pillar, etc., are called PSS. PSS refers to the patternedsapphire substrate where the GaN is grown on a sapphire substrate with apattern to enhance extraction. In the configuration illustrated, thesapphire has been removed leaving the pattern 5 registered on the GaN 4surface.

Adjacent to the pattern layer 5 and distal to the substrate 4 is apatterned phosphor layer 6. This patterned phosphor layer 6 isapproximately 30 microns thick. Sapphire is not present in thisstructure, with the patterned phosphor layer 6 directly being mounted onthe substrate 4. The patterned phosphor layer 6 may include a DBR 7.Optical isolation may be provided in part by vertically extending lightbarrier elements positioned to vertically extend throughout thepatterned phosphor layer 6, as well as a DBR 7 separately attached to orwithin the patterned phosphor layer 6 and the substrate 4. Otherembodiments may include various combinations of DBR, absorbers, andmetallization within the vertically extending light barrier elements toimprove optical isolation between emitters.

FIG. 1G illustrates, in cross section, another embodiment of anindividual emitter 10 from the arrays of FIGS. 1A, 1D, 1E. In thisembodiment, the emitter 10 includes a substrate 14. The substrate 14 maybe a silicon or ceramic substrate, for example. Adjacent to thissubstrate 14 is the emitter region 13 (shown with four emitters in FIG.1G) with each emitter region 13 surrounded by a DBR 17. The emitter 13may be a GaN semiconductor emitter, for example. Adjacent to the emitter13 and distal to the substrate 14 is a patterned phosphor region 16.

In order to achieve optical isolation, the patterned phosphor region 16,or layer, of FIGS. 1F and 1G may take the form of a ceramic phosphor,such a Lumiramic, for example, that is formed to have internal lightbarriers 21 that vertically extend between the GaN attachment surface 23and the phosphor emission surface 22. The light barriers 21 may becompositionally distinct material, thin films, or metallic reflectors.The Lumiramic may be used for the pattern phosphor layer 6 in FIG. 1F.The light barriers 21 may be formed in segmented phosphors arranged ontop each GaN mesa, or in continuous phosphor layers that extend overmultiple GaN mesas.

Alternatively, light barriers 21 may be formed by providing air gapsthat define continuous, discontinuous or partial open channels, oretched pinholes through the phosphor. The channels or pinholes may bestructured, partially structured, or randomly defined. Radial, linear,rectangular, square, hexagonal, or other suitably shaped walls orstructures may be defined. High index and/or low index particles may beintroduced. For example, a two or more layer films composed of aphosphor ceramic precursor and a light barrier/reflector/scatterer canbe repeatedly folded, sliced, and fired to form a phosphor ceramicorientable to reduce lateral light propagation.

Light barriers 21 within the phosphor ceramic are aligned within an areaof the phosphor overlaying a GaN emitter, light barriers 21 within thephosphor ceramic are aligned within the area of the phosphor overlayinga GaN emitter along the pixel perimeter, and/or light barriers 21 withinthe phosphor ceramic are aligned outside the area of the phosphoroverlaying a GaN emitter by aligning with interpixel lanes (e.g.,between GaN mesas). In other embodiments where a continuous phosphorceramic layer extends across multiple GaN mesas, a sidewall DBR layer isapplied to the GaN, followed by vertically extending light barrier 21elements (in this case air gap scattering walls) in the continuousphosphor.

The vertically extending light barrier 21 elements may be created duringmanufacture of the phosphors (e.g., by repeated folding of a bilayerincluding the light barrier and a phosphor ceramic precursor), aftercreation of the ceramic, or after attachment to the GaN, as will bedescribed below. The light barriers 21 may be created using laserdrilling or water jet drilling.

FIG. 1H illustrates a top view and side view of an example device 30 ofFIG. 1G. Device 30 includes has an emitter 13 and includes a substrate14. The substrate 14 may be a silicon or ceramic substrate, for example.Adjacent to this substrate 14 is the emitter region 13 (shown with fouremitters in FIG. 1G) with each emitter region 13 surrounded by asidecoating 38 with metal, dielectric, or diffuse reflector. The emitter13 may be a GaN semiconductor emitter, for example. Adjacent to theemitter 13 and distal to the substrate 14 is a patterned phosphor region36. The metal coating 37 around GaN pixels is shown delineating thepixels. The phosphor region 36 includes a number of vertical lightbarriers 31 that take the form of holes. Layer 36 may be arranged with arandom arrangement of holes 31 such as by etching. Such holes 31 may becylindrical and run vertically through the layer 36. The holes 31 may bespheroidal in shape and may be embedded in the layer 36. The hole 31diameters may vary from 50 to 400 nm and inter-hole spacing may bevaried in the range 0 to 300 nm. In addition to holes 31 with circularcross-section, holes (not shown) with rectangular cross-section may beused. An array of pyramidal holes (not shown) extending deep into thelayer may be also used. The air holes 31 may be back-filled with metalscattering elements and dielectrics to enhance the reflected/absorbedlight. As is illustrated in the top view of FIG. 1H, the holes 31 arerandomly spaced throughout layer 36.

FIG. 1I illustrates a top view and side view of an example device 40 ofFIG. 1G. Device 40 includes an emitter 13 and includes a substrate 14.The substrate 14 may be a silicon or ceramic substrate, for example.Adjacent to this substrate 14 is the emitter region 13 (shown with fouremitters in FIG. 1G) with each emitter region 13 surrounded by asidecoating 38 with metal, dielectric, or diffuse reflector. The emitter13 may be a GaN semiconductor emitter, for example. Adjacent to theemitter 13 and distal to the substrate 14 is a patterned phosphor region46. The metal coating 37 around GaN pixels is shown delineating thepixels. The phosphor region 46 includes a number of vertical lightbarriers 41. Vertical light barriers 41 may define pixel edges (thecenter two pixels), while others provide vertical light barriers 41formed in the phosphor layer 46 over each pixel (the edge pixels).Illustrated in FIG. 1I there are vertical barriers 41 aligned with thepixel edges of the metal coating 37. This allows for wave-guiding in thez-direction while not wave-guiding in the x-y plane of the phosphorconverter providing an increase in the pixel-isolation betweenneighbors. Ordered structures, such as photonic crystals andmetamaterials, may be used. Photonic crystals may provide rectangular,triangular and hexagonal patterns of vertical holes with at least 3layers of unit cells. Each unit cell may have a diameter of the holevarying from 100-400 nm with unit cell size varying from 300 to 600 nm.As is illustrated in the top view of FIG. 1I, the vertical barriers 41provide a grid pattern in phosphor region 36.

FIG. 1J illustrates a method 50 of making ceramic phosphor layers withlateral light barriers. The method 50 to make such layers includesmixing of the ceramic powder precursors, the ceramic binder, solvent andaddition of polymeric beads or rods, such as PMMA, at step 51. Method 50also includes slot die coating the mixture onto a substrate to form athin film at step 52. Method 50 also includes layering multiple sheetsto from thicker layers appropriate for the phosphor ceramic at step 53.After initial baking of solvents, method 50 includes sintering thepolymer beads or rods to create air pockets at step 54. The patterningand alignment of these beads or rods can help prepare the appropriateoptical scattering in the ceramic phosphor films. Method 50 alsoincludes completing the phosphor film by cutting and/or polishing tocreate the appropriately sized platelet and orientation for LED use atstep 55.

FIG. 1K illustrates a general method 60 of making ceramic phosphorlayers with air gaps. The method includes making a ceramic phosphorlayer by combining ceramic powder precursors, a ceramic binder, phosphormaterial, and solvent to form a mixture (step 61). The mixture is coatedonto a substrate to form a film (step 62). Conditions for creating airgap formation in selected regions of coated mixture are arranged by atleast one of deforming or removing material from the film, or adding atleast one of sacrificial material, sintering rods, and beads to the film(step 63). The film can be heated to form a ceramic phosphor with airgaps in selected regions (step 64).

FIGS. 1J and 1K respectively illustrate the steps of a method 50 and 60for forming ceramic phosphor layers with lateral light barriers. One ofordinary skill in the art would understand that more or less steps canbe involved. Additionally, any of the steps may be combined to beperformed at the same time. The order of these steps can also be alteredsuch that any one or more of the steps are performed in a differentsequence than illustrated in FIGS. 1J and 1K.

The devices described in FIGS. 1A-K may be used in the devices and withthe electronics described as follows. For example, the devices in FIGS.1A-K may be LED array 410 described below.

FIG. 2A is a top view of an electronics board with an LED array 410attached to a substrate at the LED device attach region 318 in oneembodiment. The electronics board together with the LED array 410represents an LED system 400A. Additionally, the power module 312receives a voltage input at Vin 497 and control signals from theconnectivity and control module 316 over traces 4188, and provides drivesignals to the LED array 410 over traces 418A. The LED array 410 isturned on and off via the drive signals from the power module 312. Inthe embodiment shown in FIG. 2A, the connectivity and control module 316receives sensor signals from the sensor module 314 over trace 418C.

FIG. 2B illustrates one embodiment of a two channel integrated LEDlighting system with electronic components mounted on two surfaces of acircuit board 499. As shown in FIG. 2B, an LED lighting system 400Bincludes a first surface 445A having inputs to receive dimmer signalsand AC power signals and an AC/DC converter circuit 412 mounted on it.The LED system 400B includes a second surface 445B with the dimmerinterface circuit 415, DC-DC converter circuits 440A and 440B, aconnectivity and control module 416 (a wireless module in this example)having a microcontroller 472, and an LED array 410 mounted on it. TheLED array 410 is driven by two independent channels 411A and 411B. Inalternative embodiments, a single channel may be used to provide thedrive signals to an LED array, or any number of multiple channels may beused to provide the drive signals to an LED array.

The LED array 410 may include two groups of LED devices. In an exampleembodiment, the LED devices of group A are electrically coupled to afirst channel 411A and the LED devices of group B are electricallycoupled to a second channel 411B. Each of the two DC-DC converters 440Aand 440B may provide a respective drive current via single channels 411Aand 411B, respectively, for driving a respective group of LEDs A and Bin the LED array 410. The LEDs in one of the groups of LEDs may beconfigured to emit light having a different color point than the LEDs inthe second group of LEDs. Control of the composite color point of lightemitted by the LED array 410 may be tuned within a range by controllingthe current and/or duty cycle applied by the individual DC/DC convertercircuits 440A and 440B via a single channel 411A and 411B, respectively.Although the embodiment shown in FIG. 2B does not include a sensormodule (as described in FIG. 2A), an alternative embodiment may includea sensor module.

The illustrated LED lighting system 400B is an integrated system inwhich the LED array 410 and the circuitry for operating the LED array410 are provided on a single electronics board. Connections betweenmodules on the same surface of the circuit board 499 may be electricallycoupled for exchanging, for example, voltages, currents, and controlsignals between modules, by surface or sub-surface interconnections,such as traces 431, 432, 433, 434 and 435 or metallizations (not shown).Connections between modules on opposite surfaces of the circuit board499 may be electrically coupled by through board interconnections, suchas vias and metallizations (not shown).

According to embodiments, LED systems may be provided where an LED arrayis on a separate electronics board from the driver and controlcircuitry. According to other embodiments, a LED system may have the LEDarray together with some of the electronics on an electronics boardseparate from the driver circuit. For example, an LED system may includea power conversion module and an LED module located on a separateelectronics board than the LED arrays.

According to embodiments, an LED system may include a multi-channel LEDdriver circuit. For example, an LED module may include embedded LEDcalibration and setting data and, for example, three groups of LEDs. Oneof ordinary skill in the art will recognize that any number of groups ofLEDs may be used consistent with one or more applications. IndividualLEDs within each group may be arranged in series or in parallel and thelight having different color points may be provided. For example, warmwhite light may be provided by a first group of LEDs, a cool white lightmay be provided by a second group of LEDs, and a neutral white light maybe provided by a third group.

FIG. 2C shows an example vehicle headlamp system 300 including a vehiclepower 302 including a data bus 304. A sensor module 307 may be connectedto the data bus 304 to provide data related to environment conditions(e.g. ambient light conditions, temperature, time, rain, fog, etc),vehicle condition (parked, in-motion, speed, direction),presence/position of other vehicles, pedestrians, objects, or the like.The sensor module 307 may be similar to or the same as the sensor module314 of FIG. 2A. AC/DC Converter 305 may be connected to the vehiclepower 302.

The AC/DC converter 305 of FIG. 2C may be the same as or similar to theAC/DC converter 412 of FIG. 2B and may receive AC power from the vehiclepower 302. It may convert the AC power to DC power as described in FIG.2B for AC-DC converter 412. The vehicle head lamp system 300 may includean active head lamp 330 which receives one or more inputs provided by orbased on the AC/DC converter 305, connectivity and control module 306,and/or sensor module 307. As an example, the sensor module 307 maydetect the presence of a pedestrian such that the pedestrian is not welllit, which may reduce the likelihood that a driver sees the pedestrian.Based on such sensor input, the connectivity and control module 306 mayoutput data to the active head lamp 330 using power provided from theAC/DC converter 305 such that the output data activates a subset of LEDsin an LED array contained within active head lamp 330. The subset ofLEDs in the LED array, when activated, may emit light in the directionwhere the sensor module 307 sensed the presence of the pedestrian. Thesesubset of LEDs may be deactivated or their light beam direction mayotherwise be modified after the sensor module 307 provides updated dataconfirming that the pedestrian is no longer in a path of the vehiclethat includes vehicle head lamp system.

FIG. 3 shows an example system 550 which includes an applicationplatform 560, LED systems 552 and 556, and optics 554 and 558. The LEDSystem 552 produces light beams 561 shown between arrows 561 a and 561b. The LED System 556 may produce light beams 562 between arrows 562 aand 562 b. In the embodiment shown in FIG. 3, the light emitted from LEDSystem 552 passes through secondary optics 554, and the light emittedfrom the LED System 556 passes through secondary optics 558. Inalternative embodiments, the light beams 561 and 562 do not pass throughany secondary optics. The secondary optics may be or may include one ormore light guides. The one or more light guides may be edge lit or mayhave an interior opening that defines an interior edge of the lightguide. LED systems 552 and/or 556 may be inserted in the interioropenings of the one or more light guides such that they inject lightinto the interior edge (interior opening light guide) or exterior edge(edge lit light guide) of the one or more light guides. LEDs in LEDsystems 552 and/or 556 may be arranged around the circumference of abase that is part of the light guide. According to an implementation,the base may be thermally conductive. According to an implementation,the base may be coupled to a heat-dissipating element that is disposedover the light guide. The heat-dissipating element may be arranged toreceive heat generated by the LEDs via the thermally conductive base anddissipate the received heat. The one or more light guides may allowlight emitted by LED systems 552 and 556 to be shaped in a desiredmanner such as, for example, with a gradient, a chamfered distribution,a narrow distribution, a wide distribution, an angular distribution, orthe like.

In example embodiments, the system 550 may be a mobile phone of a cameraflash system, indoor residential or commercial lighting, outdoor lightsuch as street lighting, an automobile, a medical device, AR/VR devices,and robotic devices. The LED System 400A shown in FIG. 2A and vehiclehead lamp system 300 shown in FIG. 2C illustrate LED systems 552 and 556in example embodiments.

The application platform 560 may provide power to the LED systems 552and/or 556 via a power bus via line 565 or other applicable input, asdiscussed herein. Further, application platform 560 may provide inputsignals via line 565 for the operation of the LED system 552 and LEDsystem 556, which input may be based on a user input/preference, asensed reading, a pre-programmed or autonomously determined output, orthe like. One or more sensors may be internal or external to the housingof the application platform 560. Alternatively or in addition, as shownin the LED system 400 of FIG. 2A, each LED System 552 and 556 mayinclude its own sensor module, connectivity and control module, powermodule, and/or LED devices.

In embodiments, application platform 560 sensors and/or LED system 552and/or 556 sensors may collect data such as visual data (e.g., LIDARdata, IR data, data collected via a camera, etc.), audio data, distancebased data, movement data, environmental data, or the like or acombination thereof. The data may be related a physical item or entitysuch as an object, an individual, a vehicle, etc. For example, sensingequipment may collect object proximity data for an advanceddriver-assistance systems/autonomous vehicle (ADAS/AV) basedapplication, which may prioritize the detection and subsequent actionbased on the detection of a physical item or entity. The data may becollected based on emitting an optical signal by, for example, LEDsystem 552 and/or 556, such as an IR signal and collecting data based onthe emitted optical signal. The data may be collected by a differentcomponent than the component that emits the optical signal for the datacollection. Continuing the example, sensing equipment may be located onan automobile and may emit a beam using a vertical-cavitysurface-emitting laser (VCSEL). The one or more sensors may sense aresponse to the emitted beam or any other applicable input.

In an example embodiment, application platform 560 may represent anautomobile and LED system 552 and LED system 556 may representautomobile headlights. In various embodiments, the system 550 mayrepresent an automobile with steerable light beams where LEDs may beselectively activated to provide steerable light. For example, an arrayof LEDs may be used to define or project a shape or pattern orilluminate only selected sections of a roadway. In an exampleembodiment, Infrared cameras or detector pixels within LED systems 552and/or 556 may be sensors (e.g., similar to sensors module 314 of FIG.2A and 307 of FIG. 2C) that identify portions of a scene (roadway,pedestrian crossing, etc.) that require illumination.

Light emitting arrays or microLED arrays such as disclosed herein maysupport a wide range of applications that benefit from fine-grainedintensity, spatial, and temporal control of light distribution. This mayinclude, but is not limited to, precise spatial patterning of emittedlight from blocks or individual LEDs. Depending on the application,emitted light may be spectrally distinct, adaptive over time, and/orenvironmentally responsive. In some embodiments, the light emittingarrays may provide pre-programmed light distribution in variousintensity, spatial, or temporal patterns. The emitted light may be basedat least in part on received sensor data and may be used for opticalwireless communications. Associated optics may be distinct at single ormultiple LED level. An example light emitting array may include a devicehaving a commonly controlled central block of high intensity LEDS withan associated common optic, whereas edge positioned LEDs may haveindividual optics. Common applications supported by light emitting LEDarrays include video lighting, automotive headlights, architectural andarea illumination, street lighting, and informational displays.

Programmable light emitting arrays may be used to selectively andadaptively illuminate buildings or areas for improved visual display orto reduce lighting costs. In addition, light emitting arrays may be usedto project media facades for decorative motion or video effects. Inconjunction with tracking sensors and/or cameras, selective illuminationof areas around pedestrians may be possible. Spectrally distinct LEDsmay be used to adjust the color temperature of lighting, as well assupport wavelength specific horticultural illumination.

Street lighting is an important application that may greatly benefitfrom use of programmable light emitting arrays. A single type of lightemitting array may be used to mimic various street light types,allowing, for example, switching between a Type I linear street lightand a Type IV semicircular street light by appropriate activation ordeactivation of selected LEDs. In addition, street lighting costs may belowered by adjusting light beam intensity or distribution according toenvironmental conditions or time of use. For example, light intensityand area of distribution may be reduced when pedestrians are notpresent. If LEDs of the light emitting array are spectrally distinct,the color temperature of the light may be adjusted according torespective daylight, twilight, or night conditions.

Programmable light emitting LEDs are also well suited for supportingapplications requiring direct or projected displays. For example,automotive headlights requiring calibration, or warning, emergency, orinformational signs may all be displayed or projected using lightemitting arrays. This allows, for example, modifying directionality oflight output from an automotive headlight. If a light emitting array iscomposed of a large number of LEDs or includes a suitable dynamic lightmask, textual or numerical information may be presented with user guidedplacement. Directional arrows or similar indicators may also beprovided.

Having described the embodiments in detail, those skilled in the artwill appreciate that, given the present description, modifications maybe made to the embodiments described herein without departing from thespirit of the inventive concept. Therefore, it is not intended that thescope of the invention be limited to the specific embodimentsillustrated and described.

What is claimed is:
 1. A light emitting device comprising: a set of twoor more light emitting diodes (LEDs) forming an array of pixels, eachpixel being arranged so as to emit light from a top surface thereof, andbeing separated from other pixels by one or more interpixel lanes; aphosphor layer positioned on the top surfaces of two or more pixels ofthe array so as to span one or more of the interpixel lanes, thephosphor layer including phosphor material and one or more of a ceramic,a glass, or an organic binder; and a plurality of holes in or through orpockets within the phosphor layer, the holes or pockets formingcollectively one or more light barriers within the phosphor layer, oneor more of the light barriers being arranged so as to reduce lateraltransmission of light through a corresponding region of the phosphorlayer spanning a corresponding one of the interpixel lanes, relative tolateral light transmission within regions of the phosphor layer that donot span an interpixel lane.
 2. The light emitting device of claim 1,one or more of the light barriers extending only partly through thephosphor layer.
 3. The light emitting device of claim 1, one or more ofthe light barriers extending entirely through the phosphor layer.
 4. Thelight emitting device of claim 1, one or more of the holes or pocketsbeing air-filled.
 5. The light emitting device of claim 1, one or moreof the holes or pockets containing metallic or dielectric scatteringelements.
 6. The light emitting device of claim 1, one or more of thelight barriers being arranged so as to permit only negligible lateraltransmission of light through a corresponding region of the phosphorlayer spanning a corresponding one of the interpixel lanes.
 7. Thephosphor structure of claim 1, the holes or pockets being arranged alongthe phosphor layer irregularly.
 8. The phosphor structure of claim 1,the holes or pockets being arranged along the phosphor layer in aradial, linear, rectangular, square, or hexagonal pattern.
 9. Thephosphor structure of claim 1, the holes or pockets being less thanabout 400 nm across.
 10. The phosphor structure of claim 1, each hole orpocket being within about 300 nm of another hole or pocket.
 11. Thelight emitting device of claim 1, each one of the light barriers beingpositioned over a corresponding interpixel lane.
 12. The light emittingdevice of claim 1, one or more of the light barriers being positionedover corresponding pixels of the array.
 13. The light emitting device ofclaim 1, the pixels of the array being less than about 300 microns wide,and the interpixel lanes being less than about 50 microns wide.
 14. Thelight emitting device of claim 1, the pixels of the array being lessthan about 100 microns wide, and the interpixel lanes being less thanabout 20 microns wide.
 15. The light emitting device of claim 1, each ofthe one or more LEDs including an emitter and distributed Braggreflectors (DBRs) that are arranged on sidewalls of the emitter and thatdo not extend into the phosphor layer.
 16. A method for making a lightemitting device, the light emitting device comprising: a set of two ormore light emitting diodes (LEDs) forming an array of pixels, each pixelbeing arranged so as to emit light from a top surface thereof, and beingseparated from other pixels by one or more interpixel lanes; a phosphorlayer positioned on the top surfaces of two or more pixels of the arrayso as to span one or more of the interpixel lanes, the phosphor layerincluding phosphor material and one or more of a ceramic, a glass, or anorganic binder; and a plurality of holes in or through or pockets withinthe phosphor layer, the holes or pockets forming collectively one ormore light barriers within the phosphor layer, one or more of the lightbarriers being arranged so as to reduce lateral transmission of lightthrough a corresponding region of the phosphor layer spanning acorresponding one of the interpixel lanes, relative to lateral lighttransmission within regions of the phosphor layer that do not span aninterpixel lane, the method comprising positioning the phosphor layer onthe top surfaces of the pixels of the array.
 17. The method of claim 16further comprising, before positioning the phosphor layer on the pixelsof the array: (A) combining ceramic powder precursors, a ceramic binder,phosphor material, and solvent to form a mixture; (B) coating themixture of part (A) onto a substrate to form a film, either as (i) asingle-layer film or (ii) a multi-layer film comprising multipleslot-die-coated thin films; (C) creating conditions for forming holes orpockets to form the light barriers within selected regions of the filmof part (B) by one or more of (i) deforming or removing material fromthe film, or (ii) adding to the mixture or to the film one or more ofsacrificial material, sintering rods or beads, or polymeric rods orbeads; and (D) after part (C), heating or sintering the film to form thephosphor layer and the plurality of light barriers within the phosphorlayer.
 18. The method of claim 17, the holes or pockets being less thanabout 400 nm across.
 19. The method of claim 17, each hole or pocket iswithin about 300 nm of another hole or pocket.
 20. A method for using alight emitting device, the light emitting device comprising: a set oftwo or more light emitting diodes (LEDs) forming an array of pixels,each pixel being arranged so as to emit light from a top surfacethereof, and being separated from other pixels by one or more interpixellanes; a phosphor layer positioned on the top surfaces of two or morepixels of the array so as to span one or more of the interpixel lanes,the phosphor layer including phosphor material and one or more of aceramic, a glass, or an organic binder; and a plurality of holes in orthrough or pockets within the phosphor layer, the holes or pocketsforming collectively one or more light barriers within the phosphorlayer, one or more of the light barriers being arranged so as to reducelateral transmission of light through a corresponding region of thephosphor layer spanning a corresponding one of the interpixel lanes,relative to lateral light transmission within regions of the phosphorlayer that do not span an interpixel lane, the method comprising causingan electrical current to flow through one or more of the pixels of thearray so that light is emitted from those pixels.